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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMSF3305/D Product Preview Medium Power Surface Mount Products MMSF3305 Motorola Preferred Device TMOS Single P-Channel Field Effect Transistors WaveFETTM devices are an advanced series of power MOSFETs which utilize Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a very low reverse recovery time. WaveFETTM devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched G and offer additional safety margin against unexpected voltage transients. * Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life * Logic Level Gate Drive -- Can Be Driven by Logic ICs * Miniature SO-8 Surface Mount Package -- Saves Board Space * Diode Is Characterized for Use In Bridge Circuits * Diode Exhibits High Speed, With Soft Recovery * IDSS Specified at Elevated Temperature * Avalanche Energy Specified * Mounting Information for SO-8 Package Provided SINGLE TMOS POWER MOSFET 9.1 AMPERES 30 VOLTS RDS(on) = 0.02 OHM TM D CASE 751-05, Style 13 SO-8 S Source Source Source Gate 1 2 3 4 8 7 6 5 Drain Drain Drain Drain Top View DEVICE MARKING S3305 Device MMSF3305R2 ORDERING INFORMATION Reel Size 13 Tape Width 12 mm embossed tape Quantity 4000 units Preferred devices are Motorola recommended choices for future use and best overall value. This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. (c)Motorola TMOS Power MOSFET Transistor Device Data Motorola, Inc. 1997 1 MMSF3305 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Negative sign for P-Channel devices omitted for clarity Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous 1 inch SQ. FR-4 or G-10 PCB Thermal Resistance -- Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current -- Continuous @ TA = 25C Continuous @ TA = 70C Pulsed Drain Current (1) Thermal Resistance -- Junction to Ambient Total Power Dissipation @ TA = 25C Linear Derating Factor Drain Current -- Continuous @ TA = 25C Continuous @ TA = 70C Pulsed Drain Current (1) Symbol VDSS VDGR VGS RTHJA PD ID ID IDM RTHJA PD ID ID IDM TJ, Tstg EAS TBD Max 30 20 20 50 2.5 20 9.1 7.3 50 80 1.56 12.5 7.2 5.8 40 - 55 to 150 Unit V V V C/W Watts mW/C A A A C/W Watts mW/C A A A C mJ 10 seconds Minimum FR-4 or G-10 PCB 10 seconds Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- Starting TJ = 25C (VDD = 30 Vdc, VGS = 10 Vdc, Peak IL = 9.1 Apk, L = TBD mH, RG = 25 W) (1) Repetitive rating; pulse width limited by maximum junction temperature. 2 Motorola TMOS Power MOSFET Transistor Device Data MMSF3305 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 15 Vdc, VGS = 0 Vdc, TJ = 70C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 0.25 mAdc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 9.1 Adc) (VGS = 4.5 Vdc, ID = 7.3 Adc) On-State Drain Current (VDS 5.0 V, VGS = 10 V) (VDS 5.0 V, VGS = 4.5 V) Forward Transconductance (VDS = 15 Vdc, ID = 8.0 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge See Figure 8 ( (VDS = 15 Vd , ID = 4 6 Ad , Vdc, 4.6 Adc, VGS = 10 Vdc) (1) Vdc, 1.0 Adc, (VDD = 15 Vd ID = 1 0 Ad VGS = 10 Vdc Vdc, RG = 6.0 ) (1) )( ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) (IS = 2.1 Adc, VGS = 0 Vdc) (1) (IS = 2.1 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time See Figure 15 ( (IS = 2 1 Ad , VGS = 0 Vdc, 2.1 Adc, Vd , dIS/dt = 100 A/s) (1) Reverse Recovery Stored Charge (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. (3) Reflects typical values. Max limit - Typ Cpk = 3 x SIGMA (4) Repetitive rating; pulse width limited by maximum junction temperature. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- TBD TBD TBD TBD TBD -- -- -- nC ns (VDS = 30 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- -- -- -- TBD TBD TBD pF (1) (1) (3) VGS(th) 0.7 -- (1) (3) RDS(on) -- -- ID(on) 40 10 gFS -- -- -- -- -- -- -- Mhos -- -- 20 30 A -- -- 1.4 -- Vdc mV/C m (1) (3) V(BR)DSS 30 -- IDSS -- -- IGSS -- -- -- -- 1.0 5.0 100 nAdc -- -- -- -- Vdc mV/C Adc Symbol Min Typ Max Unit VSD -- -- trr ta tb QRR -- -- -- -- -- -- -- -- -- -- 1.2 -- TBD -- -- -- Vdc ns C Motorola TMOS Power MOSFET Transistor Device Data 3 MMSF3305 PACKAGE DIMENSIONS -A- B M 8 5 X 45 _ J 1 4 4X -B- M_ G F NOTES: 1. DIMENSIONS A AND B ARE DATUMS AND T IS A DATUM SURFACE. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 3. DIMENSIONS ARE IN MILLIMETER. 4. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 6. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. DIM A B C D F G J K M P R MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.18 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 P 0.25 (0.010) M -T- 8X C SEATING PLANE D 0.25 (0.010) M K TB S A S R CASE 751-05 SO-8 ISSUE P STYLE 13: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 81-3-3521-8315 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://www.mot.com/SPS/ 4 MMSF3305/D Motorola TMOS Power MOSFET Transistor Device Data |
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